News Stories and Press Releases

November 13, 2017

Everspin Adds Semiconductor Veteran as new Vice President of Operations

Chandler, AZ, November 13, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), today announced the appointment of Norm Armour as Vice President of Operations, responsible for  managing Everspin’s captive and partner fab operations, equipment manufacturer partnerships and global operations. Angelo Ugge, who previously served as Vice President of Operations and Business Development, will devote his full attention to his role as Vice President of Business Development, the position that he was initially hired into. Both Amour and Ugge will report directly to Kevin Conley, Everspin’s President and CEO.

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November 2, 2017

Everspin To Announce Third Quarter 2017 Financial Results on November 13

Chandler, AZ, November 2, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), today announced that it will report results for its fiscal third quarter 2017 after the market closes  on Monday, November 13, 2017. Following the issuance of the company’s financial results press release, interested parties can listen to a live webcast of the company's  conference call which will start at 4:30 p.m. Eastern Time by visiting the Investor Relations section of Everspin’s website. 

 

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September 14, 2017

Everspin Technologies ready to ship nvNITRO ST-MRAM SSDs

Everspin Technologies is close to completing its first move into solid-state drives. Everspin recently started taking orders for solid-state drives (SSDs) that use spin-torque magnetoresistive random access memory (ST-MRAM) technology. The nvNITRO Storage Accelerator SSDs can deliver ultrafast performance far in excess of NAND flash and approaching DRAM's speed.

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September 13, 2017

Neue MRAM-Speicherklasse verhält sich wie nicht-flüchtiges DRAM

MRAMs gelten als zuverlässige Speicher zum Aufzeichnen und Schützen kritischer Systemdaten. Durch fortschrittliche Technologie ist nun MRAM-Speicher möglich, der sich wie nicht-flüchtiges DRAM verhält.

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August 23, 2017

Everspin Appoints Semiconductor Storage Veteran Kevin Conley as CEO

CHANDLER, Ariz., Aug. 23, 2017 -- Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM), today announced it had named Kevin Conley as its President and Chief Executive Officer effective Sept. 1. Conley succeeds Phill LoPresti as the company moves aggressively to capitalize on Storage Class Memory opportunities with its MRAM technology leadership.

 

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August 21, 2017

Four Foundries Back MRAM

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology.

GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly starting later this year. This represents a big shift in the market, because until now only Everspin has shipped MRAM for various applications, such as a battery-backed SRAM replacement, write-cache and others.

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August 17, 2017

What is Spin Torque MRAM?

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types.

As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading.

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August 10, 2017

Everspin Announces Second Quarter 2017 Financial Results

Chandler, AZ, August 10, 2017— Everspin Technologies, Inc. (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the company’s second quarter 2017 financial results for the quarter ended June 30, 2017.

 

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August 9, 2017

Everspin’s new MRAM-based nvNITRO NVMe card delivers Optane-crushing 1.46 million IOPS

This week, Everspin launched its line of MRAM-based nvNITRO NVMe Storage Accelerator cards with an incredible performance spec: up to 1.46 million IOPS for random 4Kbyte mixed 70/30 read/write operations. In the world of IOPS, that’s very fast. In fact it’s roughly 3x faster than an Intel P4800X Optane SSD card, which is spec’ed at up to 500K IOPS for random 4Kbyte mixed 70/30 read/write operations. Multiple factors contribute to the nvNITRO Storage Accelerator’s speed including Everspin’s new 1Gbit Spin Torque Magnetorestrictive RAM (ST-MRAM) with high-speed, DDR4, SDRAM-compatible I/O; a high-performance, MRAM-specific memory controller IP block compatible with NVMe 1.1+; and the Xilinx Kintex UltraScale KU060 FPGA that implements the MRAM controller and the board’s PCIe Gen3 x8 host interface. Everspin’s nvNITRO NVMe cards will ship in Q4 of 2017 and will be available in 1 and 2Gbyte capacities.

 

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August 8, 2017

Non-Volatile RAM is Real – Everspin Briefing Note

The future is now. For years it seems like non-volatile RAM (NVRAM) has been a technology that is just over the horizon. While there have been some isolated use cases where the technology makes sense and is being used, we are now entering, actually we’ve entered, an era where broad adoption of the technology is realistic. To underscore the state of NVRAM, Everspin Technologiesis now shipping its first version of its nvNITRO Storage Accelerator which puts NVRAM technology in the hands of data center planners and storage system builders.

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