Documents for MR25H256APDFR

Datasheets

Rev. 1.5 Effective Mar 27 2018

MR25H256-MR25H256A_Datasheet.pdf

Datasheet for MR25H256/MR25H256A, 256K, Serial SPI MRAM

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Product Change Notices (PCNs)

Effective Jan 29 2018

PCN02996 Add ChipMOS as a Subcontractor Assembly Site for the DFN package

PCN 02996 - Add ChipMOS as a subcontractor assembly site

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Rev. 1 Effective Dec 30 2011

PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING

Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.

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packaging

Rev. 1.2 Effective Apr 13 2018

Everspin DFN Package Guide.pdf

Everspin DFN package guide

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Rev. 5 Effective Apr 14 2013

EST02153_Everspins Small Flag DFN Replaces SOIC Package_AppNote_Rev5 041413.pdf

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product notes

Rev. 2 Effective Oct 13 2016

PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs

PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs

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application notes

Rev. 1 Effective Sep 28 2015

EST02880 Magnetic Immunity for Everspin MRAM 073115.pdf

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Rev. 1 Effective Mar 30 2013

Comparing Technologies FRAM vs. MRAM

Compares FRAM memory technology with Everspin's MRAM technology.

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Rev. 1 Effective Feb 1 2012

Approximating the Magnetic Field When Using Everspin MRAM

How to create an approximation of the magnetic field strength surrounding an MRAM

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Rev. 4 Effective Dec 1 2011

EVERSPIN's New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts

Replacing SRAM in SOIC or DFN package with MRAM in DFN

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Quad SPI Evaluation Boards

Rev. 1 Effective Oct 6 2015

SPI Evaluation Board Guide

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technical articles & white papers

Rev. 1.1 Effective Feb 9 2018

MRAM Improvements to Automotive Non-Volatile Memory Storage

Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.

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Rev. 1 Effective Jan 8 2010

Toggle and Spin-Torque MRAM: Status and Outlook

Article by J.M. Slaughter, et.al., of Everspin Technologies

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VHDL model

Rev. 1 Effective Aug 27 2010

MR25H256 VHDL Model

This is the VHDL model of the MR25H256. This is a high level abstraction of this product. The following is contained in the download:
1. Readme_MR25H256
2. MR25H256.vhdl - Device Model
3. Package_Utility - Standard Conversion Utilities
4. Benchtest.vhdl - Top Level Test Bench
5. MR25H256_Driver.vhdl - Sample Test Vectors used for the Verification
6. MR25H256.txt - Memory Initialization File

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RoHS / REACH

Rev. 032718 Effective Mar 27 2018

QUA00417_Everspin Reach Statement 3_27_2018.pdf

Everspin REACH statement

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Rev. 032718 Effective Mar 27 2018

QUA02364_Everspin_RoHS_compliance.pdf

Everspin RoHS compliance

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Rev. 4.20 Effective Dec 16 2016

EICC Product Level Master

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Rev. 4.20 Effective Dec 16 2016

EICC Company Level Master

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Effective Sep 23 2016

Everspin CFSI_CMRT Company Level 4.10_09232016.xls

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Effective Sep 23 2016

Everspin CFSI_CMRT by Product 4.10_09232016.xls

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Rev. 2 Effective Jan 24 2014

No Red Phosphorus content in Everspin products

Red Phosphorus Statement

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